- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 25V 80A TO-220AB | TO-220-3 | OptiMOS™ | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 175°C (TJ) | Obsolete | PG-TO-220-3 | 0 | 0 | 500 | N-Channel | 25V | 80A (Tc) | 3 mOhm @ 55A, 10V | 2V @ 100µA | 57nC @ 5V | 7027pF @ 15V | 4.5V, 10V | ±20V | 150W (Tc) | |||
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2,000
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 320MA TO92-3 | E-Line-3 | - | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | E-Line (TO-92 compatible) | 78000 | 0 | 2000 | N-Channel | 100V | 320mA (Ta) | 3 Ohm @ 500mA, 10V | 1.5V @ 1mA | - | 75pF @ 25V | 5V, 10V | ±20V | 700mW (Ta) | |||
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6,000
In-stock
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onsemi | MOSFET N-CH 500V 380MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | QFET® | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 0 | 2000 | N-Channel | 500V | 380mA (Tc) | 6 Ohm @ 190mA, 10V | 4V @ 250µA | 6.4nC @ 10V | 195pF @ 25V | 10V | ±30V | 890mW (Ta), 2.08W (Tc) | |||
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18,000
In-stock
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onsemi | MOSFET N-CH 600V 300MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | QFET® | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 0 | 0 | 2000 | N-Channel | 600V | 300mA (Tc) | 11.5 Ohm @ 150mA, 10V | 4V @ 250µA | 6.2nC @ 10V | 170pF @ 25V | 10V | ±30V | 1W (Ta), 3W (Tc) | |||
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2,000
In-stock
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onsemi | MOSFET N-CH 60V 500MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | - | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 60000 | 0 | 2000 | N-Channel | 60V | 500mA (Ta) | 5 Ohm @ 200mA, 10V | 3V @ 1mA | - | 40pF @ 10V | 10V | ±20V | 830mW (Ta) | |||
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4,000
In-stock
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onsemi | MOSFET N-CH 60V 200MA TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | - | Tape & Box (TB) | MOSFET (Metal Oxide) | Through Hole | -55°C ~ 150°C (TJ) | Active | TO-92-3 | 76000 | 0 | 2000 | N-Channel | 60V | 200mA (Ta) | 5 Ohm @ 500mA, 10V | 3V @ 1mA | - | 50pF @ 25V | 4.5V, 10V | ±20V | 400mW (Ta) |
