- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 10.1 A (1)
- - 11.4 A (1)
- - 11.8 A (2)
- - 13 A (1)
- - 49 A (1)
- - 8.5 A (2)
- - 8.6 A (1)
- - 8.9 A (2)
- 10 A (2)
- 10.5 A (1)
- 100 A (2)
- 11 A (1)
- 11.5 A (1)
- 11.7 A (2)
- 12 A (2)
- 16 A (1)
- 30 A (1)
- 39 A (2)
- 40 A (1)
- 50 A (1)
- 52 A (1)
- 57 A (1)
- 6.9 A (1)
- 60 A (4)
- 61 A (1)
- 7 A (1)
- 7.1 A (2)
- 7.4 A (1)
- 80 A (2)
- 85 A (1)
- 9.1 A (2)
- 9.2 A (1)
- 9.9 A (1)
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
47 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
21,735
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15 mOhms | Enhancement | OptiMOS | ||||||
|
4,300
In-stock
|
STMicroelectronics | MOSFET N-Ch, 100V-0.015ohms 60A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 60 A | 15 mOhms | Enhancement | |||||||
|
7,061
In-stock
|
Fairchild Semiconductor | MOSFET 150V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 52 A | 15 mOhms | 4 V | 33 nC | PowerTrench | |||||
|
1,191
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 57 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
2,710
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | Enhancement | |||||||
|
3,293
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 12.5mOhms 24nC | 12 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 61 A | 15 mOhms | 2 V | 24 nC | Enhancement | |||||
|
4,753
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
3,239
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
2,386
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel MOSFET 2.5V Specified | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.4 A | 15 mOhms | Enhancement | PowerTrench | ||||||
|
13,694
In-stock
|
onsemi | MOSFET PFET SO8 30V 9.6A TR | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.4 A | 15 mOhms | Enhancement | |||||||
|
2,180
In-stock
|
Diodes Incorporated | MOSFET P-Ch -40V 11mOhm 25Vgss 1.45W -10.1A | +/- 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.1 A | 15 mOhms | - 2 V | 47.5 nC | Enhancement | |||||
|
3,078
In-stock
|
Nexperia | MOSFET PMPB15XP/SOT1220/REEL 7" Q1/T1 | 12 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 11.8 A | 15 mOhms | - 900 mV | 100 nC | Enhancement | |||||
|
4,472
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.9 A | 15 mOhms | 1.1 V | 11 nC | ||||||
|
4,473
In-stock
|
Diodes Incorporated | MOSFET 50V N-Ch Enh FET 15mOhm 10Vgs 9.1A | 16 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 9.1 A | 15 mOhms | 2 V | 6.1 nC | Enhancement | |||||
|
2,074
In-stock
|
Infineon Technologies | MOSFET P-Ch -20V -8.9A DSO-8 OptiMOS P | +/- 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 8.9 A | 15 mOhms | - 1.2 V | - 39 nC | Enhancement | OptiMOS | ||||
|
4,209
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | |||||
|
911
In-stock
|
STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp | 20 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 60 A | 15 mOhms | Enhancement | |||||||
|
2,000
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.5 A | 15 mOhms | 2.5 V | 12.5 nC | Enhancement | |||||
|
697
In-stock
|
Infineon Technologies | MOSFET MOSFT DUAL NCh 12V 10A | SMD/SMT | SO-8 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 10 A | 15 mOhms | 2 V | 26 nC | ||||||||
|
3,770
In-stock
|
Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 15 mOhms | 1 V | 10.5 nC | Enhancement | |||||
|
1,540
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 15 mOhms | 1 V | 17 nC | Enhancement | |||||
|
36
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 80A 15mOhm 81nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 15 mOhms | 81 nC | |||||||||
|
29
In-stock
|
STMicroelectronics | MOSFET Automotive-grade P-channel -30 V, 11 mOhm typ., -40 A STripF... | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 49 A | 15 mOhms | - 4 V | 30.6 nC | Enhancement | STripFET | ||||
|
5,235
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 15 mOhms | 2 V | 2.9 nC | Enhancement | NexFET | ||||
|
220
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | |||||
|
764
In-stock
|
Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | |||||
|
750
In-stock
|
Texas instruments | MOSFET 12V N-Channel NexFET Power MOSFET 3-PICOSTAR ... | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 7.1 A | 15 mOhms | 500 mV | 5 nC | Enhancement | |||||
|
2,500
In-stock
|
Fairchild Semiconductor | MOSFET NChannel PowerTrench Notebook Power | 16 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.9 A | 15 mOhms | Enhancement | PowerTrench SyncFET | ||||||
|
8,000
In-stock
|
IR / Infineon | MOSFET MOSFT 80V 9.2A 15mOhm 31nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 9.2 A | 15 mOhms | 31 nC | |||||||||
|
4,830
In-stock
|
Diodes Incorporated | MOSFET 40V P-Ch Enh FET 25Vgss -100A 1.3W | 25 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.5 A | 15 mOhms | - 1.5 V | 47.5 nC | Enhancement |