- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1,485
In-stock
|
onsemi | MOSFET T6D3F 40V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 300 A | 760 mOhms | 2.5 V | 86 nC | Enhancement | |||||
|
23,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | ||||
|
1,731
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
|
1,850
In-stock
|
Fairchild Semiconductor | MOSFET TO-leadless MV7 80V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
|
1,050
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
|
2,499
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
|
1,486
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel PowerTrench MOSFET | 10 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2 mOhms | 86 nC | PowerTrench | ||||||||
|
937
In-stock
|
Fairchild Semiconductor | MOSFET SO-8SNGLPCH20V/8V | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 13.5 A | 8.5 mOhms | 86 nC | PowerTrench | ||||||
|
725
In-stock
|
Fairchild Semiconductor | MOSFET 80V 110A N-Chnl PowerTrench MOSFET | 20 V | Through Hole | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 110 A | 7 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
|
950
In-stock
|
Toshiba | MOSFET N-Ch DTMOSIV 600 V 240W 3000pF 30.8A | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||||
|
6,000
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | DTMOSIV | |||||
|
26
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||||
|
GET PRICE |
8,000
In-stock
|
Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 110 A | 4.8 mOhms | 3.7 V | 86 nC | StrongIRFET | ||||
|
997
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | ||||
|
VIEW | Fairchild Semiconductor | MOSFET 50A, 100V, 0.026 Ohm N-Channel UltraFET | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 26 mOhms | 3 V | 86 nC | |||||||
|
VIEW | Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||||
|
15,400
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21.3 A | 149 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | ||||
|
VIEW | Infineon Technologies | MOSFET HIGH POWER_LEGACY | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21.3 A | 149 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS |