- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 13.2 A (1)
- - 17.5 A (1)
- - 18 A (1)
- - 4.2 A (1)
- - 4.9 A (1)
- - 40 A (2)
- - 5.8 A (1)
- - 6.5 A (1)
- - 8.7 A (2)
- - 9.5 A (1)
- 10.8 A (1)
- 100 A (1)
- 11.5 A (1)
- 11.7 A (1)
- 12.2 A, - 8.8 A (1)
- 17.6 A (2)
- 2.6 A (1)
- 210 mA (1)
- 240 mA (1)
- 3.9 A (1)
- 4 A (2)
- 4.2 A (2)
- 42 A (2)
- 43 A (1)
- 44 A (1)
- 7.9 A (1)
- 8.5 A (1)
- 90 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 10 mOhms (1)
- 13 mOhms (2)
- 13.5 mOhms (2)
- 15 mOhms (2)
- 15 mOhms, 29 mOhms (1)
- 16 mOhms (3)
- 2.8 mOhms (1)
- 21 mOhms (1)
- 23 mOhms (1)
- 28 mOhms (1)
- 3.8 Ohms (1)
- 33 mOhms (1)
- 35 mOhms (1)
- 4.6 mOhms (2)
- 50 mOhms (1)
- 52 mOhms (1)
- 54 mOhms (1)
- 6 Ohms (1)
- 7 mOhms (1)
- 70 mOhms (1)
- 8 mOhms (1)
- 8.5 mOhms (1)
- 80 mOhms (1)
- 85 mOhms (1)
- 9 mOhms (2)
- 99 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 0.36 nC (1)
- 10.4 nC (1)
- 11.7 nC (1)
- 12.3 nC (1)
- 13.2 nC (1)
- 13.9 nC (1)
- 139 nC (1)
- 14.4 nC (1)
- 140 nC (1)
- 156 nC (1)
- 16.1 nC (1)
- 16.5 nC (3)
- 18 nC (1)
- 19.3 nC (1)
- 25.1 nC (1)
- 25.2 nC (2)
- 33.3 nC (3)
- 37 nC (1)
- 4 nC (1)
- 4.6 nC (1)
- 40 nC, 34 nC (1)
- 41 nC (2)
- 41.3 nC (1)
- 48.3 nC (1)
- 5.5 nC (1)
- 56 nC (1)
- 85 nC (1)
- 96.3 nC (1)
- Applied Filters :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,927
In-stock
|
Diodes Incorporated | MOSFET Comp Pair Enh FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V, - 40 V | 12.2 A, - 8.8 A | 15 mOhms, 29 mOhms | 1 V, - 1 V | 40 nC, 34 nC | Enhancement | PowerDI | |||
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2,452
In-stock
|
Diodes Incorporated | MOSFET Transistor PNP 30Vceo | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 3.9 A | 1 Ohms | 2.9 V | 13.9 nC | Enhancement | PowerDI | |||
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2,615
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 29nC | +/- 12 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 85 nC | Enhancement | PowerDI | |||
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2,642
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 931pF 19.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 28 mOhms | - 2.4 V | 19.3 nC | Enhancement | PowerDI | |||
|
|
1,828
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | |||
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1,309
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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3,057
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 8Vgss 1496pF 14.4nC | 8 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6.5 A | 33 mOhms | - 1.1 V | 14.4 nC | Enhancement | PowerDI | |||
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690
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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2,157
In-stock
|
Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 30Vgss 6807pF 139nC | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13.2 A | 8.5 mOhms | - 1.6 V | 139 nC | Enhancement | PowerDI | |||
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1,710
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | 20 V | SMD/SMT | PowerDI3333-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 54 mOhms | 1.5 V | 25.2 nC | Enhancement | PowerDI | ||||
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2,060
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | |||
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6,965
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 85 mOhms | 1.5 V | 11.7 nC | Enhancement | PowerDI | |||
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2,230
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 96pF 4nC | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 210 mA | 6 Ohms | 3 V | 4 nC | Enhancement | PowerDI | |||
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1,704
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss PPAP | +/- 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 40 A | 9 mOhms | - 400 mV | 156 nC | Enhancement | PowerDI | |||
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3,000
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | +/- 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 2.5 V | 16.5 nC | Enhancement | PowerDI | |||
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2,475
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 18 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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10,000
In-stock
|
Diodes Incorporated | MOSFET N-Ch 30V Enh FET 20Vgss 1.18W 1415pF | 20 V, 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.8 A | 16 mOhms | 1.4 V | 25.1 nC | Enhancement | PowerDI | |||
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10,000
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.6 A | 70 mOhms | 1.5 V | 4.6 nC | Enhancement | PowerDI | |||
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6,000
In-stock
|
Diodes Incorporated | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | SMD/SMT | PowerDI3333-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 99 mOhms | 25.2 nC | Enhancement | PowerDI | |||||||
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130,000
In-stock
|
Diodes Incorporated | MOSFET 25V Dual N-Ch Enh 8Vgss .24A 0.3W | 8 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 240 mA | 3.8 Ohms | 0.85 V | 0.36 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.5 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 50 mOhms | 1.5 V | 5.5 nC | Enhancement | PowerDI | |||
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10,000
In-stock
|
Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 12Vgss 80A .61W | 12 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 11.7 A | 15 mOhms | 1 V | 56 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh FET 12Vgss 104W | PowerDI5060-K-8 | Reel | Si | PowerDI | |||||||||||||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 2.8 mOhms | 3 V | 96.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8 mOhms | 3 V | 41.3 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | PowerDI | |||
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VIEW | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | 8 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 7.9 A | 35 mOhms | 1 V | 18 nC | Enhancement | PowerDI |
