MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	DMN3065LW-13	1+ $0.430 10+ $0.298 100+ $0.137 1000+ $0.105 10000+ $0.082		PDF RFQ	6,965 In-stock	Diodes Incorporated	MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC	12 V	SMD/SMT	SOT-323-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	4 A	85 mOhms	1.5 V	11.7 nC	Enhancement	PowerDI
	DMN3067LW-13	1+ $0.380 10+ $0.266 100+ $0.122 1000+ $0.094 10000+ $0.073		PDF RFQ	10,000 In-stock	Diodes Incorporated	MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC	12 V	SMD/SMT	SOT-323-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	2.6 A	70 mOhms	1.5 V	4.6 nC	Enhancement	PowerDI
	DMG3418L-13	1+ $0.390 10+ $0.272 100+ $0.125 1000+ $0.096 10000+ $0.075	GET PRICE VIEW	PDF RFQ		Diodes Incorporated	MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W	12 V	SMD/SMT	SOT-23-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	30 V	4 A	50 mOhms	1.5 V	5.5 nC	Enhancement	PowerDI

DMN3065LW-13

DMN3065LW-13

Diodes Incorporated

MOSFET 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC

Stock : 6,965

1+: $0.430

10+: $0.298

100+: $0.137

1000+: $0.105

10000+: $0.082

DMN3067LW-13

DMN3067LW-13

Diodes Incorporated

MOSFET 30V N-Ch Enh Mode 12Vgss 447pF 4.6nC

Stock : 10,000

1+: $0.380

10+: $0.266

100+: $0.122

1000+: $0.094

10000+: $0.073

DMG3418L-13

DMG3418L-13

Diodes Incorporated

MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W

Stock : 0

1+: $0.390

10+: $0.272

100+: $0.125

1000+: $0.096

10000+: $0.075

GET PRICE

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