- Package / Case :
- Minimum Operating Temperature :
- Id - Continuous Drain Current :
-
- 10 A (1)
- 10.1 A (1)
- 10.6 A (5)
- 11 A (3)
- 11.4 A (4)
- 12 A (2)
- 13 A (4)
- 13.8 A (2)
- 15 A (2)
- 15.1 A (1)
- 16.1 A (4)
- 17.5 A (4)
- 18 A (2)
- 2.8 A (2)
- 20.2 A (2)
- 21 A (2)
- 21.3 A (2)
- 22.4 A (2)
- 24 A (2)
- 28 A (2)
- 3.2 A (2)
- 3.9 A (2)
- 31.2 A (4)
- 33 A (2)
- 38 A (2)
- 4.5 A (3)
- 44 A (1)
- 46 A (2)
- 5.3 A (1)
- 6 A (6)
- 7 A (2)
- 7.3 A (3)
- 7.4 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.26 Ohms (4)
- 111 mOhms (2)
- 115 mOhms (2)
- 135 mOhms (2)
- 149 mOhms (2)
- 168 mOhms (4)
- 171 mOhms (4)
- 173 mOhms (2)
- 190 mOhms (2)
- 199 mOhms (2)
- 225 mOhms (1)
- 230 mOhms (5)
- 250 mOhms (2)
- 280 mOhms (4)
- 3.51 Ohms (1)
- 340 mOhms (3)
- 360 mOhms (1)
- 380 mOhms (2)
- 40 mOhms (2)
- 540 mOhms (3)
- 58 mOhms (2)
- 594 mOhms (8)
- 600 mOhms (2)
- 62 mOhms (2)
- 70 mOhms (1)
- 84 mOhms (2)
- 855 mOhms (4)
- 88 mOhms (2)
- 89 mOhms (2)
- 900 mOhms (1)
- 99 mOhms (4)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
80 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
4,743
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | ||||
|
|
1,717
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET3 650V 70mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 44 A | 70 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET III | |||
|
|
1,063
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 31.2A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
|
545
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
1,304
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | |||
|
|
2,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 17.5A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
|
|
707
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 46A D2PAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 46 A | 40 mOhms | 3 V | 93 nC | Enhancement | CoolMOS | |||
|
|
1,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
10,630
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | |||
|
|
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
|
|
940
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 57.2A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | |||
|
|
1,690
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 225 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
|
|
1,050
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | |||
|
|
2,499
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 72A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22.4 A | 135 mOhms | 3.5 V | 86 nC | Enhancement | CoolMOS | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
|
|
2,415
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS | |||
|
|
1,909
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
|
|
163
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
2,490
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
1,346
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 7.4 A | 600 mOhms | 3.5 V | 20 nC | SuperFET II | ||||
|
|
5,060
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
1,342
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
|
|
632
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 20.2A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 20.2 A | 190 mOhms | 73 nC | CoolMOS | |||||
|
|
725
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
15,080
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS | ||
|
|
835
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
|
|
2,427
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
734
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
|
|
3,500
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 22 nC | Enhancement | CoolMOS |