- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
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- 9.3 A (1)
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- Rds On - Drain-Source Resistance :
-
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- 9.6 mOhms (5)
- 96 mOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
86 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10,643
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | |||
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3,632
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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4,340
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | ||||
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4,733
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.8 A | 1.2 Ohms | Enhancement | ||||||
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4,632
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
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4,717
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 660mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 660 mA | 1 Ohms | - 2.1 V | 14 nC | Depletion | ||||
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2,940
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 200 mOhms | Enhancement | UltraFET | |||||
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4,600
In-stock
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Fairchild Semiconductor | MOSFET 200V 3.9A 70mOHMS NCH ULTRAFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.9 A | 70 mOhms | Enhancement | UltraFET | |||||
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2,234
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 200V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 130 mOhms | Enhancement | PowerTrench | |||||
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2,138
In-stock
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Fairchild Semiconductor | MOSFET N-CH 200V 18A Q-FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.6 A | 130 mOhms | Enhancement | PowerTrench | |||||
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8,663
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 24A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 42 mOhms | 2 V | 20 nC | Enhancement | OptiMOS | |||
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2,023
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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5,121
In-stock
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STMicroelectronics | MOSFET Low charge STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 125 mOhms | Enhancement | ||||||
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11,660
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.3 mOhms | 2 V | 87 nC | Enhancement | ||||
|
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6,705
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15.2 A | 77 mOhms | 2 V | 11.6 nC | Enhancement | ||||
|
|
4,578
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 15.2A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15.2 A | 77 mOhms | |||||||
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3,424
In-stock
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STMicroelectronics | MOSFET N-Ch 200 Volt 5 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 650 mOhms | Enhancement | ||||||
|
|
3,603
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | CoolMOS | ||||||
|
|
7,730
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
|
|
2,517
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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GET PRICE |
4,992
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET 55mOhms 11nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 55 mOhms | 11 nC | Enhancement | ||||
|
|
657
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | |||||
|
|
8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
5,816
In-stock
|
IR / Infineon | MOSFET MOSFT 200V 5A 600mOhm 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 5 A | 600 mOhms | 15 nC | Enhancement | |||||
|
|
1,480
In-stock
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STMicroelectronics | MOSFET N Ch 1500V 2.5A Pwr MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 30 A | 75 mOhms | Enhancement | ||||||
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|
947
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | ||||
|
|
4,720
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | ||||
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|
413
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
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3,450
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 7A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 7 A | 194 mOhms | 2 V | 5.6 nC | Enhancement | OptiMOS | |||
|
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5,201
In-stock
|
Nexperia | MOSFET N-CH DMOS 200V 0.4A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 400 mA | 1.6 Ohms | Enhancement |
