- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,000
In-stock
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IR / Infineon | MOSFET Automotive MOSFET P 75A 120nC D2Pak | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 70 A | 20 mOhms | - 4 V | 120 nC | |||||
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4,413
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | Enhancement | ||||
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5,686
In-stock
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IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | ||||
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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2,881
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | StrongIRFET | |||||||
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2,965
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -28A 65mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | |||||
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1,021
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | ||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | |||||
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52,200
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -55V 3.4A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | 26 nC | ||||||||
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6,730
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | ||||||||
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92,400
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | ||||||||
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973
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -12A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 12 A | 175 mOhms | 12.7 nC | ||||||||
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1,597
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V 11A 175mOhm 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | |||||
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638
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | Enhancement | |||||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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1,975
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -18A 110mOhm 21.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | ||||||||
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3,013
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 63 nC | |||||
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4,000
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | - 3 V | 26 nC | |||||
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2,980
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 65 mOhms | Enhancement | ||||||
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1,830
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 175mOhms 12.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | - 4 V | 19 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 175mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 11 A | 175 mOhms | 12.7 nC | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 110 mOhms | Enhancement |
