- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,901
In-stock
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Fairchild Semiconductor | MOSFET 40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.7 A | 44 mOhms | Enhancement | PowerTrench | |||||
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11,747
In-stock
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Fairchild Semiconductor | MOSFET 40V PCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.2 A | 22 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
390,400
In-stock
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onsemi | MOSFET -40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | ||||
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GET PRICE |
9,493
In-stock
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onsemi | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 12.3 mOhms | Enhancement | PowerTrench | ||||
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2,966
In-stock
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Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 13 mOhms | Enhancement | PowerTrench | |||||
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3,786
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 11 A | 13 mOhms | Enhancement | PowerTrench | |||||
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2,400
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -40V -10.5A 15mOhm 73nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | 73 nC | ||||||||
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2,739
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 10.4 mOhms | 79.5 nC | ||||||
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3,985
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 6.7A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 14 A | 44 mOhms | Enhancement | PowerTrench | |||||
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3,261
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | |||||
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2,578
In-stock
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Diodes Incorporated | MOSFET 40V P-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.4 A | 100 mOhms | Enhancement | ||||||
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2,447
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 40 V | - 4 A | 38 mOhms | 6.9 nC | ||||||
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2,868
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 4.4 A | 38 mOhms | 6.9 nC | ||||||
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2,459
In-stock
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Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | ||||
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1,008
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 190 mOhms | 25 nC | ||||||||
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624
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -120A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 120 A | 3.5 mOhms | 158 nC | OptiMOS | |||||
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895
In-stock
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Diodes Incorporated | MOSFET 40V P-Ch Enh FET 45mOhm -10V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 20 A | 40 mOhms | - 1 V | 23.2 nC | Enhancement | ||||
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980
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 70 A | 9.1 mOhms | 54 nC | OptiMOS | |||||
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19,998
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 10.8A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 50 A | 12.3 mOhms | Enhancement | PowerTrench | |||||
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8,995
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 U-DFN2020-6 T&R 3K | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6 A | 33 mOhms | - 2.2 V | 23.2 nC | Enhancement | ||||
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4,927
In-stock
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Fairchild Semiconductor | MOSFET -40V P-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.8 A | 14.8 mOhms | 35 nC | PowerTrench | |||||
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2,750
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 30 A | 25 mOhms | |||||||
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5,998
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS 31V-40 SOT26,3K | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.7 A | 80 mOhms | 7 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 7.5 A | 30 mOhms | Enhancement |
