- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,238
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 45 V | 4.8 A | 46 mOhms | 1.2 V | 22.4 nC | Enhancement | ||||
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4,096
In-stock
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Toshiba | MOSFET POWER MOSFET TRANSISTOR PD=170W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 45 V | 150 A | 1.7 mOhms | 1.4 V | 99 nC | Enhancement |