- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
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- 9.2 A (1)
- Rds On - Drain-Source Resistance :
-
- 1.4 Ohms (1)
- 1.8 mOhms (1)
- 10.5 mOhms (1)
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- 11.2 mOhms (1)
- 13 mOhms (3)
- 14.5 mOhms (1)
- 14.6 mOhms (2)
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- 17.4 mOhms (2)
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- 2 mOhms (1)
- 2.1 mOhms (2)
- 2.3 Ohms (1)
- 2.4 mOhms (1)
- 2.5 mOhms (1)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 2.8 Ohms (1)
- 2.9 mOhms (2)
- 22 mOhms (3)
- 26 mOhms (5)
- 3 mOhms (2)
- 3.05 mOhms (1)
- 3.1 mOhms (1)
- 3.5 mOhms (1)
- 3.6 mOhms (1)
- 3.7 mOhms (2)
- 3.8 mOhms (2)
- 3.9 mOhms (1)
- 4 mOhms (1)
- 4.4 mOhms (2)
- 4.5 mOhms (2)
- 4.6 mOhms (2)
- 4.7 mOhms (1)
- 4.8 mOhms (3)
- 47 mOhms (1)
- 5 mOhms (1)
- 5.8 mOhms (1)
- 5.9 mOhms (1)
- 50 mOhms (1)
- 6.5 mOhms (2)
- 6.6 mOhms (1)
- 6.7 mOhms (1)
- 7 mOhms (3)
- 7.1 mOhms (1)
- 7.2 mOhms (1)
- 7.3 mOhms (1)
- 7.34 mOhms (2)
- 7.5 mOhms (1)
- 7.8 mOhms (2)
- 8.4 mOhms (1)
- 8.5 mOhms (1)
- 9 mOhms (2)
- 9.6 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 106.7 nC (1)
- 110 nC (1)
- 117 nC (2)
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- 200 nC (1)
- 220 nC (1)
- 233 nC (2)
- 246 nC (2)
- 26.4 nC (2)
- 270 nC (1)
- 271 nC (1)
- 285 nC (1)
- 34 nC (2)
- 40 nC (1)
- 50 nC (1)
- 51 nC (1)
- 56 nC (4)
- 57 nC (2)
- 59 nC (1)
- 63.4 nC (2)
- 65 nC (1)
- 68 nC (2)
- 69 nC (2)
- 72 nC (3)
- 73 nC (1)
- 74 nC (5)
- 79 nC (1)
- 8.7 nC (1)
- 84 nC (1)
- 85 nC (1)
- 87 nC (1)
- Tradename :
90 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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7,833
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | ||||||||
|
|
5,731
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.9 mOhms | 2.3 V | 63.4 nC | Enhancement | ||||
|
|
4,703
In-stock
|
Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
|
|
4,574
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | |||
|
|
2,990
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 9.2 A | 14.5 mOhms | Enhancement | PowerTrench | |||||
|
|
1,114
In-stock
|
Fairchild Semiconductor | MOSFET Discrete Auto N-Ch PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | Enhancement | PowerTrench | |||||
|
|
1,569
In-stock
|
Fairchild Semiconductor | MOSFET 75V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 235 A | 3.1 mOhms | Enhancement | PowerTrench | |||||
|
|
2,382
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | |||||
|
|
1,639
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.9 mOhms | 2.3 V | 63.4 nC | Enhancement | OptiMOS | |||
|
|
4,783
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 30 A | 15.9 mOhms | 1.2 V | 72 nC | Enhancement | OptiMOS | |||
|
|
816
In-stock
|
STMicroelectronics | MOSFET 75V 3.5mOhm N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 4 mOhms | Enhancement | ||||||
|
|
627
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | ||||||||
|
|
4,660
In-stock
|
Infineon Technologies | MOSFET 75V, 89A, DirectFET 5.7mOhm, 124nC Og | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 89 A | 4.5 mOhms | 3.7 V | 124 nC | StrongIRFET | ||||
|
|
4,360
In-stock
|
STMicroelectronics | MOSFET N-Ch 75 Volt 40 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 40 A | 18 mOhms | Enhancement | ||||||
|
|
4,862
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 3.7 mOhms | 2.3 V | 69 nC | Enhancement | OptiMOS | |||
|
|
1,242
In-stock
|
STMicroelectronics | MOSFET N-channel 75 V | 20 V | SMD/SMT | PowerSO-10 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 240 A | 2.3 Ohms | Enhancement | ||||||
|
|
2,566
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 87 A | 7.2 mOhms | 3.7 V | 84 nC | Enhancement | StrongIRFET | |||
|
|
3,560
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | ||||
|
|
11,451
In-stock
|
Diodes Incorporated | MOSFET 50V 200mW | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 200 mA | 1.4 Ohms | Enhancement | ||||||
|
|
1,771
In-stock
|
Fairchild Semiconductor | MOSFET 75V 50a .16Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | PowerTrench | |||||
|
|
725
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel UltraFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
|
|
1,355
In-stock
|
Fairchild Semiconductor | MOSFET Discrete Auto N-Ch UltraFET Trench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 58 A | 13 mOhms | Enhancement | PowerTrench | |||||
|
|
918
In-stock
|
Infineon Technologies | MOSFET MOSFT 75V 100A 7.8mOhm 160nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.8 mOhms | 160 nC | ||||||||
|
|
GET PRICE |
10,780
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 7.34 mOhms | 56 nC | |||||||
|
|
552
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 17 A | 5.9 mOhms | 4 V | 65 nC | Enhancement | ||||
|
|
880
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 4.8 mOhms | 1.2 V | 233 nC | Enhancement | OptiMOS | |||
|
|
388
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 230A 3mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 230 A | 2.5 mOhms | 160 nC | ||||||||
|
|
690
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 2.7 mOhms | 2.3 V | 117 nC | Enhancement | OptiMOS | |||
|
|
663
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 240 A | 2 mOhms | 3.7 V | 285 nC | StrongIRFET | ||||
|
|
1,738
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 53A 16mOhm 50nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 53 A | 16 mOhms | 50 nC |
