- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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16,180
In-stock
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STMicroelectronics | MOSFET N Ch 24V 0.8m 280A Pwr MOSFET | 20 V | SMD/SMT | PowerSO-10 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 280 A | 1 MOhms | Enhancement | |||||
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1,894
In-stock
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onsemi | MOSFET 24V 110A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 110 A | 4.1 mOhms | Enhancement | |||||
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434
In-stock
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IR / Infineon | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 44 A | 1.5 mOhms | Enhancement | |||||
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GET PRICE |
3,200
In-stock
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STMicroelectronics | MOSFET N-Ch 24V 0.95mOhm 180A STripFET Mosfet | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 180 A | 1.2 mOhms | 109 nC | Enhancement | |||
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1,740
In-stock
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IR / Infineon | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 Ohms | 4 V | 180 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 44 A | 1.5 mOhms | Enhancement |
