- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- 100 A (21)
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- 40 A (10)
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- 5.8 A (1)
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- 58 A (2)
- 64 A (2)
- 66 A (1)
- 75 A (2)
- 81 A (1)
- 84 A (2)
- 9.9 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (5)
- 1.05 mOhms (1)
- 1.1 mOhms (1)
- 1.15 mOhms (1)
- 1.2 mOhms (5)
- 1.3 mOhms (1)
- 1.4 mOhms (1)
- 1.45 mOhms (1)
- 1.5 mOhms (6)
- 1.6 mOhms (3)
- 1.8 mOhms (3)
- 1.95 mOhms (1)
- 10.1 mOhms (1)
- 10.3 mOhms (1)
- 10.6 mOhms (1)
- 11.6 mOhms (1)
- 160 mOhms (1)
- 17 mOhms (1)
- 2 mOhms (4)
- 2.1 mOhms (1)
- 2.4 mOhms (3)
- 2.5 mOhms (2)
- 2.6 mOhms (1)
- 2.7 mOhms (2)
- 2.9 mOhms (1)
- 3 mOhms (2)
- 3.2 mOhms (4)
- 3.3 mOhms (1)
- 3.4 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (1)
- 3.8 mOhms (1)
- 4 mOhms (1)
- 4.2 mOhms (2)
- 4.5 mOhms (1)
- 41 mOhms (1)
- 5 mOhms (3)
- 5.6 mOhms (3)
- 5.6 mOhms, 1.6 mOhms (1)
- 5.7 mOhms (1)
- 5.8 mOhms, 3.4 mOhms (1)
- 5.9 mOhms (1)
- 590 uOhms (1)
- 6 mOhms (1)
- 6.2 mOhms (1)
- 6.5 mOhms (1)
- 6.6 mOhms, 3.5 mOhms (1)
- 6.7 mOhms (2)
- 600 uOhms (3)
- 7.5 mOhms (1)
- 70.4 mOhms (1)
- 8.5 mOhms (2)
- 8.6 mOhms (1)
- 800 uOhms (2)
- 820 uOhms (1)
- 900 uOhms (2)
- 970 uOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10 nC (1)
- 111 nC (1)
- 12 nC (3)
- 12.4 nC (1)
- 14 nC (2)
- 15 nC (1)
- 15 nC, 47 nC (1)
- 15 nC, 66 nC (1)
- 168 nC (2)
- 17 nC (2)
- 18 nC (1)
- 19 nC (2)
- 19 nC, 31 nC (2)
- 19 nC, 45 nC (1)
- 192 nC (1)
- 20 nC (1)
- 21 nC (4)
- 22 nC (1)
- 23 nC (5)
- 29 nC (2)
- 30 nC (1)
- 31 nC (1)
- 32 nC (2)
- 343 nC (3)
- 35 nC (3)
- 37 nC (1)
- 39 nC (2)
- 4.3 nC (1)
- 40 nC (1)
- 45 nC (1)
- 46 nC (1)
- 48 nC (4)
- 49 nC (1)
- 5.4 nC (1)
- 52 nC (5)
- 55 nC (1)
- 6.8 nC (1)
- 62 nC (1)
- 66 nC (1)
- 7 nC (1)
- 7.7 nC (1)
- 77 nC (1)
- 78 nC (2)
- 8.1 nC (1)
- 8.8 nC (1)
- 82 nC (2)
- 85 nC (3)
- 9.4 nC (1)
- 94 nC (1)
- 95 nC, 43 nC (1)
96 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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33,436
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 800 uOhms | 1.2 V | 85 nC | Enhancement | OptiMOS | |||
|
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27,001
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 58A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 58 A | 4.2 mOhms | 1.2 V | 14 nC | Enhancement | OptiMOS | |||
|
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10,906
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
|
|
10,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.8 mOhms | 1.2 V to 2 V | 29 nC | OptiMOS | ||||
|
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12,317
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 6.5 mOhms | Enhancement | PowerTrench | |||||
|
|
5,606
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 8.5 mOhms | Enhancement | PowerTrench | |||||
|
|
3,594
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 23 A | 2.4 mOhms | 1.7 V | 32 nC | PowerTrench SyncFET | ||||||
|
|
3,397
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 28 A | 1.6 mOhms | 1.7 V | 49 nC | PowerTrench SyncFET | ||||||
|
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2,847
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 30 A | 1.2 mOhms | 1.7 V | 66 nC | PowerTrench SyncFET | ||||||
|
|
3,305
In-stock
|
Fairchild Semiconductor | MOSFET 25V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 15 A, 30 A | 5.6 mOhms, 1.6 mOhms | 1.8 V, 1.5 V | 19 nC | Power Stage PowerTrench SyncFet | ||||
|
|
3,669
In-stock
|
Fairchild Semiconductor | MOSFET 25V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 15 A | 5.6 mOhms | 19 nC, 45 nC | Power Stage PowerTrench | |||||
|
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2,445
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 130 A | 1.2 mOhms | 95 nC, 43 nC | PowerTrench SyncFET | |||||
|
|
9,379
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.2 mOhms | 1.2 V | 52 nC | Enhancement | ||||
|
|
11,702
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 2 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
|
|
4,630
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | ||||
|
|
3,890
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
|
|
5,056
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | ||||
|
|
10,370
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 84A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 84 A | 2.7 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | |||
|
|
1,697
In-stock
|
Infineon Technologies | MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 47 nC | Enhancement | FastIRFet | |||
|
|
3,236
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 220 A | 1.6 mOhms | 46 nC | Directfet | |||||||
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GET PRICE |
43,220
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3 mOhms | 1.2 V | 21 nC | Enhancement | OptiMOS | ||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 900 uOhms | 1.2 V | 78 nC | Enhancement | OptiMOS | |||
|
|
4,710
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 163 A | 1.3 mOhms | 1.2 V to 2 V | 62 nC | Enhancement | OptiMOS | |||
|
|
3,935
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
4,071
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 40A TSDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.2 V | 48 nC | Enhancement | ||||
|
|
3,950
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.8 mOhms | 1.2 V to 2 V | 19 nC | OptiMOS | ||||
|
|
3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
|
|
1,946
In-stock
|
IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 44 A | 1.1 mOhms | 1.6 V | 77 nC | |||||
|
|
2,768
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 2.1 mOhms | 1.9 V | 40 nC | Directfet | ||||
|
|
23,701
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC |
