- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,940
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 200 mOhms | Enhancement | UltraFET | ||||||
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8,544
In-stock
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Diodes Incorporated | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 9.5 A | 14 mOhms | 1.5 V | 15 nC | Enhancement | |||||
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1,958
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 9.5A 200mOhm 16.7nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 9.5 A | 200 mOhms | 16.7 nC | |||||||||
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1,844
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode PowerDI 12A - 9.5A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 10 mOhms | Enhancement | |||||||
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VIEW | Diodes Incorporated | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 9.5 A | 14 mOhms | 1.5 V | 15 nC | Enhancement | |||||
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587
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 300 mOhms | 2 V to 4 V | 23.3 nC | Enhancement |