- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
- Tradename :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,613
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 10 mOhms | 2 V | 16 nC | PowerTrench | ||||||
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4,804
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 13 mOhms | 2 V | 8 nC | PowerTrench | ||||
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6,085
In-stock
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IR / Infineon | MOSFET MOSFT 30V 11A 13.8mOhm 7.2nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 18.2 mOhms | 7.2 nC | ||||||||
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4,458
In-stock
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IR / Infineon | MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 11 A | 16.3 mOhms | 1.8 V | 15 nC | |||||
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1,690
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11A DPAK-2 CoolMOS C7 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 225 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
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4,956
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 8.8 mOhms | Enhancement | OptiMOS | |||||
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4,917
In-stock
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Fairchild Semiconductor | MOSFET 60V N-Channel QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 11 A | 115 mOhms | Enhancement | ||||||
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GET PRICE |
38,610
In-stock
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onsemi | MOSFET SO-8 SGL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 12.5 mOhms | Enhancement | PowerTrench | ||||
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50,000
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 17.5 mOhms | 6.2 nC | ||||||||
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983
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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6,447
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 11 A | 10.5 mOhms | Enhancement | OptiMOS | |||||
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24,232
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 11A 11.9mOhm 6.2nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 14.2 mOhms | 1.8 V | 6.2 nC | |||||
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725
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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980
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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624
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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835
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 41A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11 A | 199 mOhms | 3 V | 20 nC | Enhancement | CoolMOS | |||
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2,869
In-stock
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onsemi | MOSFET NFET SO8 30V 11A NCH 0.030R | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 12.7 mOhms | Enhancement | ||||||
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130
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 11 A | 11.8 mOhms | Enhancement | OptiMOS | |||||
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2,925
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHAN | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 8.5 mOhms | 1 V | 30.6 nC | DIOFET | ||||
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2,400
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS C3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS S5 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 380 mOhms | Enhancement | CoolMOS | |||||
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120
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 11 A | 390 mOhms | 3 V | 60 nC | Enhancement |
