- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,994
In-stock
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Fairchild Semiconductor | MOSFET MV5 150V/20V single n-channel powertrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 2.4 A | 333 mOhms | 2 V | 4.1 nC | Enhancement | PowerTrench | |||
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872
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.4 A | 450 mOhms | Enhancement | ||||||
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902
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 30V 2.4A Micro 8 | 20 V | SMD/SMT | Micro-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 2.4 A | 135 mOhms | 7.8 nC | Enhancement | |||||
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3,355
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 2.4 A | 4.68 Ohms | 2.5 V | 6 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET Vds=30V Id=2.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.4 A | 88 mOhms | Enhancement | ||||||
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81
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 2.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.4 A | 1.8 Ohms | 2.5 V | 6.7 nC | Enhancement | CoolMOS |
