- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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206,716
In-stock
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Nexperia | MOSFET 60V 0.3A N-CHANNEL TRENCH MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 360 mA | 1.6 Ohms | 0.6 nC | Enhancement | ||||
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9,245
In-stock
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Diodes Incorporated | MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement | |||
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9,900
In-stock
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Nexperia | MOSFET BSS138BK/TO-236AB/REEL 11" Q3/ | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 360 mA | 1 Ohms | 480 mV | 700 pC | Enhancement | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-CHANNEL MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 50 V | 360 mA | 4.5 Ohms | 1.5 V | 0.6 nC | Enhancement |
