- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,703
In-stock
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Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 160 A | 1.8 mOhms | 200 nC | Enhancement | Directfet | ||||
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3,833
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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1,254
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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454,600
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 39nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | 39 nC | ||||||||
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2,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | |||
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1,422
In-stock
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Infineon Technologies | MOSFET MOSFET, 135V, 168A 6.2 mOhm, 206 nC Qg | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 160 A | 4.7 mOhms | 3 V | 210 nC | StrongIRFET | ||||
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602
In-stock
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STMicroelectronics | MOSFET N-Channel 40V Pwr Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2 mOhms | Enhancement | ||||||
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1,457
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 160A 4.2mOhm 85nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 3.3 mOhms | 4 V | 85 nC | |||||
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1,045
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | ||||
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625
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 160 A | 3.9 mOhms | Enhancement | PowerTrench | |||||
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18,400
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
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128
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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5,000
In-stock
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Toshiba | MOSFET N-Ch 60V 4180pF 60nC 160A 132W | 20 V | SMD/SMT | SOP-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 1.9 mOhms | 1.5 V | 60 nC | Enhancement | |||||
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14,570
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 160A D2PAK-6 OptiMOS 3 | 20 V | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 3 mOhms | Enhancement | OptiMOS | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement | ||||
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800
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement | ||||||
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609
In-stock
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IR / Infineon | MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 160 A | 4.2 mOhms | 4 V | 85 nC | |||||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 160 A | 2.6 mOhms | 2 V | 112 nC | Enhancement | ||||
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4,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 2.4 mOhms | Enhancement | OptiMOS | |||||
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346
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 3.2 mOhms | 1.35 V to 2.35 V | 35 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 93.3 nC | Enhancement |
