- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,945
In-stock
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Diodes Incorporated | MOSFET 100V 1.4A N-Channel MOSFET H-Bridge | 20 V | SMD/SMT | SM-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V | 1.1 A | 700 mOhms, 1 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement | ||||
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2,308
In-stock
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Fairchild Semiconductor | MOSFET 200V NCh PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 1.1 A | 725 mOhms | Enhancement | PowerTrench | |||||
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4,990
In-stock
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Nexperia | MOSFET 80 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 80 V | 1.1 A | 345 mOhms | 1.7 V | 3 nC | Enhancement | |||||
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4,409
In-stock
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Fairchild Semiconductor | MOSFET NChannel Logic Level Enhancement Mode FET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 250 mOhms | Enhancement |
