- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,598
In-stock
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Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 13mOhms 4.3nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 9.9 A | 17 mOhms | 1.8 V | 4.3 nC | |||||
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GET PRICE |
16,970
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9.9 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | ||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 200m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 9.9 A | 168 mOhms | 4 V | 7 nC | Enhancement |
