- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,321,100
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.1 A | 35 mOhms | 1 V | 3.6 nC | Enhancement | |||
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2,780
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 55 V | 5.1 A | 65 mOhms | 29 nC | Enhancement | |||||
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3,282
In-stock
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IR / Infineon | MOSFET MOSFT 150V 5A 44mOhm 25nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 5.1 A | 34 mOhms | 4 V | 25 nC | ||||
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875
In-stock
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Diodes Incorporated | MOSFET Comp. 60V NP-Chnl | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 5.1 A | 70 mOhms | Enhancement | |||||
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4,500
In-stock
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Diodes Incorporated | MOSFET Dl 60V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 5.1 A | 40 mOhms | Enhancement |
