- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,233
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.5 A | 7 mOhms | Enhancement | PowerTrench SyncFET | |||||
|
28,140
In-stock
|
Fairchild Semiconductor | MOSFET 100V/20V Nch 2xCool PowerTrench MOSFET | 20 V | SMD/SMT | DualCool-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 14.5 A | 7.5 mOhms | 44 nC | PowerTrench | |||||
|
1,722
In-stock
|
Diodes Incorporated | MOSFET N-Ch FET VDSS 30V VGSS 20V PD 1.68W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14.5 A | 2.5 mOhms | 46.9 nC | ||||||
|
48
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 14.5A D2PAK-2 | 20 V | SMD/SMT | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14.5 A | 200 mOhms | OptiMOS |