- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,977
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 155 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.9 A | 14.8 mOhms | Enhancement | PowerTrench | |||||
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1,304
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.9 A | 16 mOhms | 3 V | 17 nC | Enhancement | ||||
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1,971
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 8.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 8.9 A | 21.6 mOhms | 2.5 V | 4.9 nC | |||||
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4,992
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 8.9 A | 16 mOhms | Enhancement | PowerTrench | |||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 8.9 A | 16 mOhms | 3 V | 17 nC | Enhancement | ||||
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2,560
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 30V 8.9A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 30 V | 8.9 A | 21.3 mOhms | 6.9 nC |
