- Manufacture :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | ||||
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5,240
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 52 mOhms | - 1.7 V | 12.3 nC | Enhancement | ||||
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2,930
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 4.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 76 mOhms | - 1 V | 23 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 52 mOhms | - 1.7 V | 12.3 nC | Enhancement | PowerDI |
