- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,536
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100 V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 mA | 10 Ohms | Enhancement | |||||
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5,481
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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2,605
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 mA | 3 Ohms | 1 V | 0.45 nC | Enhancement | |||
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2,226
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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6,356
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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13,385
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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44,164
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS | 20 V | SMD/SMT | SOT-416-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||
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7,289
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 6 Ohms | 800 mV | Enhancement | ||||
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5,584
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 0.1A 30V -20 VGSS | 20 V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||
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VIEW | onsemi | MOSFET NCH 4V DRIVE SERIES | 20 V | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 50 V | 100 mA | 7.5 Ohms | |||||||
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9,486
In-stock
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Toshiba | MOSFET SM Sig N-CH MOS 30V 0.1A 20V VGSS | 20 V | SMD/SMT | CST3-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 100 mA | 3.6 Ohms | ||||||||
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VIEW | Toshiba | MOSFET Dual N-ch 30V 0.1A | 20 V | SMD/SMT | ES6-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 100 mA | 4 Ohms | Enhancement |