- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 1.7 mOhms (1)
- 11.2 mOhms (2)
- 11.3 mOhms (1)
- 11.5 mOhms (1)
- 12.1 mOhms (1)
- 12.2 mOhms (1)
- 12.7 mOhms (1)
- 13 mOhms (3)
- 13.3 mOhms (1)
- 13.5 mOhms (1)
- 15 mOhms (1)
- 15.4 mOhms (1)
- 16 mOhms (6)
- 16.6 mOhms (1)
- 18 mOhms (1)
- 2.8 mOhms (1)
- 20 mOhms (1)
- 24 mOhms (2)
- 28 mOhms (1)
- 3.3 mOhms (1)
- 3.5 mOhms (1)
- 30 mOhms (1)
- 4.1 mOhms (1)
- 4.2 mOhms (2)
- 5 mOhms (1)
- 5.3 mOhms (1)
- 5.4 mOhms (4)
- 5.5 mOhms (1)
- 5.8 mOhms (1)
- 58 mOhms (1)
- 6 mOhms (1)
- 6.2 mOhms (2)
- 6.3 mOhms (3)
- 6.4 mOhms (1)
- 6.7 mOhms (2)
- 7.1 mOhms (1)
- 7.2 mOhms (2)
- 7.3 mOhms (3)
- 7.7 mOhms (3)
- 7.8 mOhms (3)
- 7.9 mOhms (1)
- 8 mOhms (2)
- 8.5 mOhms (1)
- 8.8 mOhms (2)
- 9 mOhms (3)
- 9.4 mOhms (2)
- Qg - Gate Charge :
- Tradename :
75 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||
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67,313
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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21,735
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15 mOhms | Enhancement | OptiMOS | |||||
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4,703
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 2 V | 33 nC | Enhancement | OptiMOS | |||
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8,888
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||
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4,416
In-stock
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Fairchild Semiconductor | MOSFET 40/20V 550A NChnl LL Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.3 mOhms | 1 V | 30 nC | Enhancement | ||||
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|
GET PRICE |
34,976
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 67 nC | Enhancement | OptiMOS | ||
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7,215
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PwrTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 11.5 mOhms | Enhancement | PowerTrench | |||||
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3,194
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 60V 50 A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.5 mOhms | Enhancement | ||||||
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3,229
In-stock
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Fairchild Semiconductor | MOSFET 60V 50a .15 Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.4 mOhms | Enhancement | PowerTrench | |||||
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2,173
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 20 mOhms | 4 V | 31 nC | Enhancement | OptiMOS | |||
|
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9,000
In-stock
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Fairchild Semiconductor | MOSFET 80V N Channel Power Trench MosFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 11.3 mOhms | 2 V | 20 nC | Enhancement | ||||
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6,134
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.3 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
|
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50,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
|
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5,010
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.4 mOhms | 1.2 V | 30 nC | Enhancement | OptiMOS | |||
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3,963
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.7 mOhms | 1.2 V | 29 nC | Enhancement | OptiMOS | |||
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1,483
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 50 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 24 mOhms | Enhancement | ||||||
|
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3,554
In-stock
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STMicroelectronics | MOSFET AC Pwr switch | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 28 mOhms | Enhancement | ||||||
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6,488
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 6.2 mOhms | 2 V | 50 nC | Enhancement | OptiMOS | |||
|
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2,204
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 50 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 18 mOhms | Enhancement | ||||||
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1,633
In-stock
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onsemi | MOSFET NFET SO8FL 100V 15A 14MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 12.2 mOhms | 2 V | 20 nC | Enhancement | ||||
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3,813
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 12.7 mOhms | Enhancement | OptiMOS | |||||
|
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4,441
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 5.4 mOhms | 1 V | 11 nC | Enhancement | OptiMOS | |||
|
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2,241
In-stock
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Fairchild Semiconductor | MOSFET MV780/20V1000AMOSFET N-channelPowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 50 A | 30 mOhms | 2 V | 20 nC | Enhancement | ||||
|
|
2,496
In-stock
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Fairchild Semiconductor | MOSFET MV8 40/20V 740A N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 7.9 mOhms | 2 V | 24 nC | Enhancement | PowerTrench | |||
|
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2,323
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Fast Switching | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 8.8 mOhms | Enhancement | PowerTrench | |||||
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1,771
In-stock
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Fairchild Semiconductor | MOSFET 75V 50a .16Ohms/VGS=1V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 50 A | 16 mOhms | Enhancement | PowerTrench | |||||
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2,045
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS 3 | 20 V | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 8.8 mOhms | Enhancement | OptiMOS | ||||||
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4,264
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 4.2 mOhms | 1 V | 31 nC | Enhancement | OptiMOS | |||
|
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1,426
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 70A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 50 A | 15.4 mOhms | 2.4 V | 64 nC | Enhancement | OptiMOS |
