- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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53,574
In-stock
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Nexperia | MOSFET N-CH TRNCH 100V .15A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 150 mA | 3.5 Ohms | Enhancement | ||||||
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9,768
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 5 Ohms | Enhancement | ||||||
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8,688
In-stock
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Diodes Incorporated | MOSFET N-Ch 60V 3A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 7.5 Ohms | Enhancement | ||||||
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10,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A | 20 V | SMD/SMT | CST3C-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement |