- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,370
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 5.7 mOhms | 41 nC | Enhancement | |||||
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3,669
In-stock
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Fairchild Semiconductor | MOSFET 25V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 15 A | 5.6 mOhms | 19 nC, 45 nC | Power Stage PowerTrench | |||||
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1,110
In-stock
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Fairchild Semiconductor | MOSFET 60V/20V Dual Nch Power Trench MOSFET | 20 V | SMD/SMT | PQFN-12 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 4.5 mOhms | 1.5 V | 49 nC | Enhancement | Power Clip | |||
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771
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
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4,904
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 4.5 mOhms | Enhancement | OptiMOS | |||||
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1,909
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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962
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 15A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 15 A | 280 mOhms | 2.5 V | 94 nC | Enhancement | CoolMOS | |||
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2,311
In-stock
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Fairchild Semiconductor | MOSFET 40V 15A DPAK N-Chnl PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 14 mOhms | 2 V | 15 nC | Enhancement | PowerTrench | |||
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3,880
In-stock
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IR / Infineon | MOSFET MOSFT 100V 15A 115mOhm 29.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | ||||||||
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533
In-stock
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STMicroelectronics | MOSFET 200V 0.15Ohm 15A N-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 15 A | 160 mOhms | Enhancement | ||||||
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1,651
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.012 Ohm typ., 15 A STripFET F7 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 15 A | 14 mOhms | 2 V | 17 nC | Enhancement | ||||
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4,775
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||||
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740
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Power MOSFET 8-VSONP -55 t... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 58 mOhms | 3.2 V | 4.3 nC | Enhancement | NexFET | |||
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2,026
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||
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2,098
In-stock
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Toshiba | MOSFET N-Ch DTMOS VII-H 1.9W 630pF 15A 30V | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 10.4 mOhms | 2.3 V | 9.8 nC | Enhancement | ||||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement | ||||
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4,277
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 7 mOhms | Enhancement | PowerTrench | |||||
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2,000
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 115mOhms 29.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15 A | 115 mOhms | 29.3 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 15A 7mOhm 28nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 15 A | 10.5 mOhms | 28 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET 650V CoolMOS C7 Power Trans; 130mOhm | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET UMOSVIII 40V 17.8m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 13.7 mOhms | 2.5 V | 10 nC | Enhancement | ||||
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104
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 8.7 mOhms | 8.3 nC | Enhancement | StrongIRFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 19A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 15 A | 64 mOhms | Enhancement | OptiMOS |
