- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
25 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,225
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CH Fast SwitCH PwrTrenCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 7.4 mOhms | Enhancement | PowerTrench | ||||||
|
3,451
In-stock
|
Fairchild Semiconductor | MOSFET SO-8 N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | Enhancement | PowerTrench | ||||||
|
5,394
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 13A 11mOhm 44nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 18 mOhms | 44 nC | |||||||||
|
12,777
In-stock
|
Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | ||||||
|
7,129
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | ||||
|
1,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
|
9,108
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | Enhancement | OptiMOS | ||||||
|
1,174
In-stock
|
Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | 21 nC, 47 nC | PowerTrench SyncFET | ||||||
|
4,919
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 13A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 13 A | 74 mOhms | 2 V | 7 nC | Enhancement | OptiMOS | ||||
|
1,355
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 13 A | 7.65 mOhms | 4 V | 55 nC | PowerTrench | ||||||
|
5,060
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
|
1,066
In-stock
|
STMicroelectronics | MOSFET N-Channel 250V Pwr Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 13 A | 235 mOhms | Enhancement | |||||||
|
2,612
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 78 mOhms | 3 V | 8 nC | Enhancement | |||||
|
1,217
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | Enhancement | CoolMOS | ||||||
|
4,000
In-stock
|
Infineon Technologies | MOSFET 30V SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 11.2 mOhms | 1.8 V | 15 nC | SmallPowIR | |||||
|
734
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 49A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
|
52,400
In-stock
|
STMicroelectronics | MOSFET N-Ch 100 Volt 10 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 13 A | 115 mOhms | Enhancement | |||||||
|
2,606
In-stock
|
onsemi | MOSFET NFET 25V 65A 0.0075R DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 13 A | 7.5 mOhms | Enhancement | |||||||
|
5,000
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Fast Switching | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 9.4 mOhms | Enhancement | PowerTrench | ||||||
|
23,000
In-stock
|
Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 14.5 mOhms | 1.5 V | 13.7 nC | Enhancement | |||||
|
2,500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER_NEW | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13 A | 168 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | ||||
|
2,476
In-stock
|
Toshiba | MOSFET N-Ch 30V FET 13A 1.9W 1350pF | 20 V | SMD/SMT | SOP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 14.7 mOhms | ||||||||||
|
VIEW | Toshiba | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 96 mOhms | 4 V | 7 nC | Enhancement | |||||
|
VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 54 mOhms | 2 V to 4 V | 11.2 nC | Enhancement | |||||
|
VIEW | Toshiba | MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 96 mOhms | 4 V | 7 nC | Enhancement |