- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,868
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 13.5mOhms 30nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 30 nC | Enhancement | |||||
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3,127
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 60V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 10 A | 14 mOhms | Enhancement | PowerTrench | |||||
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3,247
In-stock
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Infineon Technologies | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 14.9 mOhms | 2 V to 4 V | 40 nC | Enhancement | ||||
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5,028
In-stock
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Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
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3,557
In-stock
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IR / Infineon | MOSFET MOSFT 80V 10A 13.4mOhm 27nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 10 A | 13.4 mOhms | 27 nC | ||||||||
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3,635
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | |||
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2,913
In-stock
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Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 10 mOhms | Enhancement | PowerTrench SyncFET | |||||
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2,186
In-stock
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IR / Infineon | MOSFET MOSFT DUAL NCh 20V 10A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 14.6 mOhms | 2.55 V | 7.4 nC | |||||
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3,864
In-stock
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STMicroelectronics | MOSFET Automotive-grade N-channel 30 V, 25 mOhm typ, 10 A STripFE... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 33 mOhms | 1 V | 3.7 nC | Enhancement | ||||
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2,495
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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1,237
In-stock
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Diodes Incorporated | MOSFET N-CHAN ENHNCMNT MODE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | Enhancement | ||||||
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2,611
In-stock
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Infineon Technologies | MOSFET 30V 3.8nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 20 mOhms | 1.8 V | 10 nC | SmallPowIR | ||||
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3,770
In-stock
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Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 15 mOhms | 1 V | 10.5 nC | Enhancement | ||||
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220
In-stock
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Infineon Technologies | MOSFET MOSFT DUAL NCh 20V 10A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 18.3 mOhms | |||||||||
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VIEW | Toshiba | MOSFET UMOSVIII 250V 205m (VGS=10V) SOP-ADV | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 168 mOhms | 4 V | 7 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Transistr95ohm250V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 95 mOhms | 2 V to 4 V | 11 nC | Enhancement |
