- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
47,466
In-stock
|
Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 19 mOhms | 2.1 V | 4.4 nC | PowerTrench | ||||
|
|
4,979
In-stock
|
Fairchild Semiconductor | MOSFET 30V 9A N-Channel PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 20 mOhms | Enhancement | PowerTrench | |||||
|
|
11,840
In-stock
|
Fairchild Semiconductor | MOSFET 40V Dual N & P-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 40 V | 9 A | 24 mOhms | Enhancement | PowerTrench | |||||
|
|
4,632
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
|
4,146
In-stock
|
Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 14 mOhms | 2.1 V | 9.3 nC | PowerTrench | ||||||
|
|
4,774
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 9A 17mOhm 15nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 9 A | 21 mOhms | 15 nC | ||||||||
|
|
1,591
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 9A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 385 mOhms | Enhancement | CoolMOS | |||||
|
|
4,836
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 35A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 11.5 mOhms | Enhancement | OptiMOS | |||||
|
|
2,275
In-stock
|
Fairchild Semiconductor | MOSFET 30V 9A 11.5 OHM NCH POWER TR | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 8.2 mOhms | Enhancement | PowerTrench | |||||
|
|
1,053
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel Power Trench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 19 mOhms | 5 nC, 10 nC | Enhancement | PowerTrench | ||||
|
|
2,075
In-stock
|
onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | ||||
|
|
1,110
In-stock
|
onsemi | MOSFET 60V 9A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | Enhancement | ||||||
|
|
1
In-stock
|
onsemi | MOSFET NFET DPAK 60V .150R TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 122 mOhms | 3 V | 7.1 nC | |||||
|
|
1,437
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 9A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 9 A | 350 mOhms | 2.5 V | 22 nC | Enhancement | CoolMOS | |||
|
|
2,500
In-stock
|
onsemi | MOSFET NFET DPAK 30V 40A 13MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9 A | 13 mOhms | Enhancement | ||||||
|
|
VIEW | Fairchild Semiconductor | MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9 A | 280 mOhms | Enhancement | ||||||
|
|
1,652
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 590 mOhms | 2.5 V | 15 nC | Enhancement | ||||
|
|
2,516
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 6.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 590 mOhms | 2.5 V | 15 nC | Enhancement | CoolMOS | |||
|
|
155
In-stock
|
Infineon Technologies | MOSFET N-Ch 550V 9A DPAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 9 A | 360 mOhms | 2.5 V | 23 nC | Enhancement | CoolMOS |
