- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 10 mOhms (3)
- 100 mOhms (1)
- 11.4 mOhms (1)
- 12.4 mOhms (1)
- 12.8 mOhms (1)
- 14.5 mOhms (1)
- 140 mOhms (1)
- 150 mOhms (1)
- 173 mOhms (2)
- 180 mOhms (1)
- 220 mOhms (1)
- 299 mOhms (2)
- 6.4 mOhms (1)
- 6.5 mOhms (1)
- 7.4 mOhms (1)
- 7.6 mOhms (1)
- 8.5 mOhms (1)
- 8.8 mOhms (2)
- 8.9 mOhms (1)
- 9 mOhms (1)
- 9.3 mOhms (1)
- 9.7 mOhms (1)
- 94 mOhms (1)
28 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,573
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | ||||||
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3,087
In-stock
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Fairchild Semiconductor | MOSFET 60V 12A 10 OHM NCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 8.8 mOhms | Enhancement | PowerTrench | |||||
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3,416
In-stock
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Fairchild Semiconductor | MOSFET PT8 40V/20V LL NCh PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 12 A | 9.7 mOhms | 9.7 nC, 18.5 nC | PowerTrench | ||||||
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3,115
In-stock
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Fairchild Semiconductor | MOSFET N-Channel FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 150 mOhms | Enhancement | ||||||
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1,743
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 6.4 mOhms | 43 nC | PowerTrench | ||||||
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1,175
In-stock
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Fairchild Semiconductor | MOSFET PQFN88 PKG, 199mohm, 600V, SuperFET2 | 20 V | SMD/SMT | Power-88-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 299 mOhms | 3.5 V | 39 nC | SuperFET II | ||||
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4,044
In-stock
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IR / Infineon | MOSFET MOSFT 60V 12A 9.4mOhm 26nC Qg | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 7.4 mOhms | 4.9 V | 26 nC | |||||
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2,885
In-stock
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IR / Infineon | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 12 A | 7.6 mOhms | 36 nC | Enhancement | Directfet | ||||
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1,909
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CHANNEL POWER TRENCH | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 6.5 mOhms | 7.6 nC, 16 nC | Enhancement | |||||
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4,315
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 12 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 100 mOhms | Enhancement | ||||||
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4,710
In-stock
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Diodes Incorporated | MOSFET 100V N-CH MOSFET 100V 12A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12 A | 140 mOhms | 2 V | 9.7 nC | Enhancement | ||||
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3,485
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | Enhancement | OptiMOS | |||||
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3,860
In-stock
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onsemi | MOSFET NFET SO8 30V 9.9A 12.5mOhm | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9 mOhms | Enhancement | ||||||
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900
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 12 A | 299 mOhms | Enhancement | CoolMOS | |||||
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1,492
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 8.8 mOhms | Enhancement | OptiMOS | |||||
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2,503
In-stock
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IR / Infineon | MOSFET 30V 5nC SGL N-CH HEXFET Pwr MOSFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 1.8 V | 5.4 nC | SmallPowIR | ||||
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1,605
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8,2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | 31.6 nC | Enhancement | |||||
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150
In-stock
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onsemi | MOSFET 60V 12A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 94 mOhms | Enhancement | ||||||
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2,875
In-stock
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Fairchild Semiconductor | MOSFET 30V PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 12 A | 8.5 mOhms | Enhancement | PowerTrench SyncFET | |||||
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3,000
In-stock
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Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.9 mOhms | 1.4 V | 7.5 nC | Enhancement | |||||
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs 0.5W 70A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | 1 V | 14 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9.3 mOhms | 11.7 nC | ||||||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 30V 12A | 20 V | SMD/SMT | SOP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 11.4 mOhms | Enhancement | ||||||
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524
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 12A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 600 V | 12 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | CoolMOS | |||
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400
In-stock
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IR / Infineon | MOSFET MOSFT 30V 25A 6.6mOhm 9.6nC Qg | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 12.8 mOhms | 4.7 nC | Enhancement | |||||
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5
In-stock
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IR / Infineon | MOSFET MOSFT 30V 12A 12.4mOhm 5.4nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 12.4 mOhms | 5.4 nC | Enhancement |
