- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
19 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
23,565
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
|
4,086
In-stock
|
Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 3 mOhms | PowerTrench SyncFET | |||||||
|
4,836
In-stock
|
Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 2.5 mOhms | PowerTrench SyncFET | |||||||
|
5,529
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 13.9 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | ||||
|
2,382
In-stock
|
IR / Infineon | MOSFET 75V 1 N-CH HEXFET 26mOhms 74nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | Enhancement | ||||||
|
2,730
In-stock
|
STMicroelectronics | MOSFET N-channel 300 V, 0.063 Ohm typ., 42 A STripFET(TM) II ... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 300 V | 42 A | 63 mOhms | 2 V | 90 nC | Enhancement | |||||
|
GET PRICE |
7,088
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.1mOhms 9.6nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 7.1 mOhms | 9.6 nC | ||||||||
|
2,151
In-stock
|
Fairchild Semiconductor | MOSFET PT7 30/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 4 mOhms | PowerTrench SyncFET | |||||||
|
2,190
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 3.5 mOhms | Enhancement | PowerTrench SyncFET | ||||||
|
21,280
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 42 A | 7.4 mOhms | 28 nC | PowerTrench | ||||||
|
1,747
In-stock
|
Infineon Technologies | MOSFET MOSFT 100V 42A 36mOhm 73.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 36 mOhms | 73.3 nC | |||||||||
|
2,042
In-stock
|
IR / Infineon | MOSFET MOSFT 75V 42A 26mOhm 74nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||||
|
73
In-stock
|
onsemi | MOSFET NFET D2PAK 100V 40A 30MO | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 28 mOhms | ||||||||
|
5,046
In-stock
|
Toshiba | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 11.3 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||||||
|
12,000
In-stock
|
Fairchild Semiconductor | MOSFET 80V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 42 A | 5.5 mOhms | 3.4 V | 59 nC | PowerTrench | |||||
|
VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||||
|
VIEW | Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 42 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement | |||||
|
VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC | |||||||||
|
VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 26mOhms | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 42 A | 26 mOhms | 74 nC |