- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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56,155
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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10,000
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 55 A | 11.5 mOhms | Enhancement | PowerTrench | ||||||
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2,469
In-stock
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Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | ||||
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2,473
In-stock
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Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | |||||
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1,433
In-stock
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Fairchild Semiconductor | MOSFET 30V NCH DPAK POWR TRENCH | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 55 A | 8.6 mOhms | Enhancement | PowerTrench SyncFET | ||||||
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11,000
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 10.3 mOhms | 2 V | 25 nC | Enhancement | OptiMOS | |||
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4,017
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | |||||
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5,999
In-stock
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Toshiba | MOSFET UMOSVIII 100V 6.5m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 5.5 mOhms | 4 V | 49 nC | Enhancement |