- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,500
In-stock
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onsemi | MOSFET T8 40V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1.6 mOhms | 1.2 V | 89 nC | Enhancement | ||||
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389
In-stock
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Fairchild Semiconductor | MOSFET 80V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 270 A | 4.3 mOhms | 2 V | 178 nC | Enhancement | ||||
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89
In-stock
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IR / Infineon | MOSFET MOSFT 60V 270A 2.5mOhm 200nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2 mOhms | 4 V | 200 nC | |||||
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4,000
In-stock
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IR / Infineon | MOSFET 40V N-Ch 270A 1.0 mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 uOhms | 2.8 V | 220 nC | Directfet | ||||
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VIEW | Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1mOhm 220nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 700 Ohms | 220 nC | Enhancement | Directfet | ||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1 MOhms | 220 nC | Enhancement | |||||
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307
In-stock
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STMicroelectronics | MOSFET N-channel 40 V | 20 V | SMD/SMT | PowerSO-10 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1.25 Ohms | Enhancement |
