- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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25,304
In-stock
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Fairchild Semiconductor | MOSFET SSOT-3 N-CH 30V | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 81 mOhms | Enhancement | ||||
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13,186
In-stock
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Nexperia | MOSFET TAPE7 PWR-MO | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.9 A | 77 mOhms | Enhancement | ||||
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5,720
In-stock
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IR / Infineon | MOSFET MOSFT 55V 1.9A 160mOhm 7nC | 20 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 55 V | 1.9 A | 160 mOhms | 7 nC | ||||||
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2,854
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 230 mOhms | Enhancement | ||||
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4,492
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||
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40,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement |
