- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,976
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.4 A | 44 mOhms | Enhancement | UltraFET | |||||
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1,980
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | 13 nC | CoolMOS | |||||
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5,756
In-stock
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Fairchild Semiconductor | MOSFET 150/20V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 4.4 A | 46 mOhms | 1.5 V | PowerTrench | |||||
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4,990
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 180 mOhms | Enhancement | ||||||
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5,261
In-stock
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Nexperia | MOSFET 60V single N-channel Trench MOSFET | 20 V | SMD/SMT | DFN2020MD-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 72 mOhms | 1.3 V | 9.2 nC | Enhancement | ||||
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122
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS |
