- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6,580
In-stock
|
Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 900 mOhms | Enhancement | |||||
|
665
In-stock
|
Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 800 mA | 1.8 Ohms | Enhancement | |||||
|
4,207
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-563-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | 2.5 V | Enhancement | ||||
|
9,000
In-stock
|
Diodes Incorporated | MOSFET Dual N-Channel | 20 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement | |||||
|
6,000
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-323-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 800 mA | 3 Ohms | Enhancement |