- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,402
In-stock
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Fairchild Semiconductor | MOSFET 150V 14a 0.120 Ohm | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 14 A | 120 mOhms | Enhancement | PowerTrench | |||||
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4,208
In-stock
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Diodes Incorporated | MOSFET 30V DUAL N-CH ENH 20V VGS 3.7 IDS | 20 V | SMD/SMT | DFN3020-B-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 3.7 A | 120 mOhms | 3.9 nC | Enhancement | |||||
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GET PRICE |
32,980
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 120 mOhms | Enhancement | |||||
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3,558
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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4,915
In-stock
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Diodes Incorporated | MOSFET N-Ch 31V to 99V 60V 120mOhm 606pF | 20 V | SMD/SMT | X1-DFN1616-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 3 V | 12.3 nC | Enhancement | ||||
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557
In-stock
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Infineon Technologies | MOSFET N and P-Ch 60V 3A, -2A DSO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 60 V | 3 A | 120 mOhms | 4 V | 3 nC | Enhancement | SIPMOS | |||
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1,765
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL N-CH | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 120 mOhms | 1.2 V | 600 pC | Enhancement | ||||
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21,870
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 120 mOhms | 1 V | 5 nC | Enhancement | ||||
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14,500
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 1 V, 1 V | 12.3 nC | Enhancement | ||||
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2,757
In-stock
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onsemi | MOSFET -60V -18.5A P-Channel | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 18.5 A | 120 mOhms | Enhancement | ||||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET GATE OX, 60V, NCH, .120MO (6V), TRENCH | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.7 A | 120 mOhms | 2.4 V | 7 nC | |||||
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VIEW | Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgss 0.8W 600pF | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 120 mOhms | 1 V, 1 V | 12.3 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-ch 150V 18A 0.08 ohm | 20 V | SMD/SMT | TFP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 120 mOhms | Enhancement | ||||||
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5
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 2.9A SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | GaN | N-Channel | 60 V | 2.9 A | 120 mOhms | Enhancement |
