- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
14 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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10,844
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 N-CH 30V | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 60 mOhms | Enhancement | |||||
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1,513
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH 60mOhm HEXFET -31A ID | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | Enhancement | ||||
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2,131
In-stock
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onsemi | MOSFET 16-128MHZ3.3VGPEMI | 20 V | SMD/SMT | DFN-5x6-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 17 A | 60 mOhms | ||||||
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2,459
In-stock
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Diodes Incorporated | MOSFET 40V 9.9A P-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 9.9 A | 60 mOhms | - 1 V | 29.6 nC | Enhancement | |||
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8,608
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
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3,000
In-stock
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onsemi | MOSFET NFET DFN 20V 4.6A 3X3 60M | 20 V | SMD/SMT | DFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4.3 A | 60 mOhms | Enhancement | |||||
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6,730
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -31A 60mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 60 mOhms | 42 nC | |||||||
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256
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -100V -0.4A 60mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | 120 nC | |||||||
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405
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||
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3,685
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 32mOhm -10V -6.8A | 20 V | SMD/SMT | U-DFN2020-E-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 60 mOhms | - 1 V to - 2.4 V | 10.9 nC | Enhancement | |||
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4,300
In-stock
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onsemi | MOSFET Pwr MOSFET 60V 4.5A 78mOhm SGL N-CH | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 60 mOhms | 1.2 V | Enhancement | ||||
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4,774
In-stock
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onsemi | MOSFET NCH 4A 60V 4V DRIVE MCPH6 | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4 A | 60 mOhms | 1.2 V | 10 nC | Enhancement | |||
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1,400
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 600 V | 47 A | 60 mOhms | 3 V | 260 nC | Enhancement | ||||
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2,259
In-stock
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IR / Infineon | MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 5.8 A | 60 mOhms | 18 nC |
