- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,573
In-stock
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Fairchild Semiconductor | MOSFET N-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 180 mOhms | Enhancement | ||||||
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1,055
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 16A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 16 A | 180 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
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6,549
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 180 mOhms | Enhancement | ||||||
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740
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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4,263
In-stock
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Diodes Incorporated | MOSFET 30V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3 A | 180 mOhms | Enhancement | ||||||
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8,300
In-stock
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onsemi | MOSFET LOW-NOISE AMPLIFIER | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.8 A | 180 mOhms | 2 nC | ||||||
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2,495
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10 A | 180 mOhms | Enhancement | ||||||
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383
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGate | 20 V | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 10 A | 180 mOhms | 4 V | 7 nC | ||||||
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2,075
In-stock
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onsemi | MOSFET NCH 100V 9A TP-FA(DPAK) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 9 A | 180 mOhms | 1.5 V | 9.8 nC | Enhancement | ||||
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33
In-stock
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Diodes Incorporated | MOSFET Dl 60V N-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.2 A | 180 mOhms | Enhancement | ||||||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.6 A | 180 mOhms | Enhancement | ||||||
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4,990
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.4 A | 180 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 550V 17A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 17 A | 180 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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8
In-stock
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Microsemi | MOSFET | 20 V | Through Hole | TO-39-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8 A | 180 mOhms | 4 V | 28.51 nC | Enhancement |
