- Mounting Style :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
46,740
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 54 A | 11 mOhms | Enhancement | PowerTrench | ||||
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2,808
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 73 A | 11 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
22,650
In-stock
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onsemi | MOSFET SO-8 N-CH 1&2 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.3 A | 11 mOhms | Enhancement | PowerTrench SyncFET | ||||
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276
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | ||||
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3,008
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 11 mOhms | Enhancement | OptiMOS | |||||
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800
In-stock
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onsemi | MOSFET NFET D2PAK 100V 76A 13MOH | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 76 A | 11 mOhms | 2 V to 4 V | 120 nC | |||||
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1,618
In-stock
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Fairchild Semiconductor | MOSFET 40V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 21 A | 11 mOhms | Enhancement | PowerTrench | |||||
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1,158
In-stock
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Fairchild Semiconductor | MOSFET SO-8 DUAL N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7.5 A | 11 mOhms | Enhancement | PowerTrench | |||||
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35,700
In-stock
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STMicroelectronics | MOSFET N-Ch, 75V-0.0095ohms 80A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 11 mOhms | 3 V | Enhancement | |||||
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522
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 84A 11mOhm 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 85 A | 11 mOhms | 4 V | 120 nC | |||||
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965
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET N Chan 30V/6.3-9.7A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.7 A | 11 mOhms | 1.05 V | 18.85 nC | Enhancement | ||||
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1,042
In-stock
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Diodes Incorporated | MOSFET P-Channel 2.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 11 mOhms | - 2 V | 60.4 nC | Enhancement | ||||
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700
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 11mOhms 80nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 84 A | 11 mOhms | 80 nC | Enhancement | |||||
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2,329
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | ||||
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4,370
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | ||||
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250
In-stock
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Toshiba | MOSFET N-Ch 60A 98W FET 120V 2000pF 34nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 60 A | 11 mOhms | 2 V to 4 V | 34 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 4 V | 40 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 11 mOhms | Enhancement | ||||||
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4,872
In-stock
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Toshiba | MOSFET N-Ch 60V 1000pF 15nC 13.9mOhm 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 33 A | 11 mOhms | 2 V to 4 V | 15 nC | Enhancement | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 75V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 11 mOhms | Enhancement | ||||||
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GET PRICE |
20,000
In-stock
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Toshiba | MOSFET MOSFET N-Ch 30V 24A | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 24 A | 11 mOhms | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 55 V | 62 A | 11 mOhms | 40 nC | Enhancement | ||||||
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VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 11mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 11 mOhms | Enhancement |
