- Maximum Operating Temperature :
- Qg - Gate Charge :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
3,397
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 28 A | 1.6 mOhms | 1.7 V | 49 nC | PowerTrench SyncFET | ||||||
|
|
7,312
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
|
|
3,236
In-stock
|
Infineon Technologies | MOSFET 25V 1 N-CH HEXFET 1.25mOhms 46nC | 20 V | SMD/SMT | DirectFET-MX | Reel | 1 Channel | Si | N-Channel | 25 V | 220 A | 1.6 mOhms | 46 nC | Directfet | |||||||
|
|
1,165
In-stock
|
Infineon Technologies | MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 298 A | 1.6 mOhms | 1 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
1,115
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.6 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
3,416
In-stock
|
Infineon Technologies | MOSFET MOSFET N-CH 25V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1.6 mOhms | 1.8 V | 111 nC | StrongIRFET | ||||
|
|
1,500
In-stock
|
onsemi | MOSFET T8 40V LOW COSS | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 270 A | 1.6 mOhms | 1.2 V | 89 nC | Enhancement | ||||
|
|
900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||||
|
|
956
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | ||||
|
|
654
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
669
In-stock
|
IR / Infineon | MOSFET MOSFET N CH 60V 240A D2PAK | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 1.6 mOhms | 3.7 V | 200 nC | StrongIRFET | ||||
|
|
3,872
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 320A 1.6mOhm 170nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 170 nC | Enhancement | ||||||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
|
|
1,974
In-stock
|
Infineon Technologies | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.6 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
1,600
In-stock
|
Infineon Technologies | MOSFET 40V StrongIRFET 195A,1.6mOhm,216nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 3 V | 216 nC | StrongIRFET | ||||||
|
|
8,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 1.6 mOhms | 1.2 V | 44 nC | Enhancement | OptiMOS | |||
|
|
1,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 1.6 mOhms | 1.2 V | 166 nC | Enhancement | OptiMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 4 V | 170 nC | Enhancement | ||||
|
|
VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 184 A | 1.6 mOhms | 129 nC | Enhancement | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.6 mOhms | Enhancement | OptiMOS | |||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 4 V | 170 nC | Enhancement |
