- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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29,260
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||||
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10,000
In-stock
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STMicroelectronics | MOSFET N Ch 40V 5.4mOhm 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | Enhancement | |||||||
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3,275
In-stock
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onsemi | MOSFET NFET SO8FL 30V 52A 5.8MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 52 A | 5.8 mOhms | 2.1 V | 18.2 nC | ||||||
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2,821
In-stock
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onsemi | MOSFET NFET SO8FL 30V 46A 6.96MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 46 A | 5.8 mOhms | 1.3 V | 18.6 nC | Enhancement | |||||
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205
In-stock
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onsemi | MOSFET NFET 40V 116A PB | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 116 A | 5.8 mOhms | Enhancement | |||||||
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GET PRICE |
12,419
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | ||||
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1,395
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | Enhancement | OptiMOS | ||||||
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6,000
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14 A | 5.8 mOhms | 15 nC, 30 nC | Enhancement | PowerTrench | |||||
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GET PRICE |
30,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
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1,150
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.8 mOhms | 1.5 V | 36 nC | Enhancement | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET 75V 1 N-CH HEXFET 5.8mOhms 79nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 120 A | 5.8 mOhms | 4 V | 79 nC | ||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 60V 70A Rdson=0.0058Ohm | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 70 A | 5.8 mOhms | Enhancement | |||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 40V 5.0mOhm 80A STripFET III | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5.8 mOhms | 40 nC | Enhancement | ||||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 60V 75A Rdson=0.0058Ohm | 20 V | SMD/SMT | TFP-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 5.8 mOhms | Enhancement |