- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,419
In-stock
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Fairchild Semiconductor | MOSFET SER BOOST LED DRVR | 20 V | SMD/SMT | MLP-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel | 100 V | 3 A | 110 mOhms | PowerTrench | ||||||
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1,153
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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6,499
In-stock
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Fairchild Semiconductor | MOSFET 60V Single | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.8 A | 110 mOhms | Enhancement | ||||||
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3,007
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 110mOhms 21.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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1,438
In-stock
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Diodes Incorporated | MOSFET 30V P-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4 A | 110 mOhms | Enhancement | ||||||
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1,188
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 59mOhms 4.7nC | 20 V | SMD/SMT | SO-8 | Reel | Si | P-Channel | - 30 V | - 5.4 A | 110 mOhms | 4.7 nC | |||||||||
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1,083
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | - 4 V | 32 nC | Enhancement | ||||
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1,156
In-stock
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Diodes Incorporated | MOSFET Dl 30V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.4 A | 110 mOhms | Enhancement | ||||||
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1,975
In-stock
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IR / Infineon | MOSFET MOSFT PCh -55V -18A 110mOhm 21.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 18 A | 110 mOhms | 21.3 nC | ||||||||
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GET PRICE |
9,800
In-stock
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onsemi | MOSFET 60V P-Ch PowerTrench Integrated | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 110 mOhms | Enhancement | PowerTrench | ||||
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13,000
In-stock
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onsemi | MOSFET 60V 3A N-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 110 mOhms | Enhancement | ||||||
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6,000
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch LogicLevel PowerTrench MOSFET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.4 A | 110 mOhms | Enhancement | PowerTrench | |||||
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5,647
In-stock
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onsemi | MOSFET PFET TSOP6 60V 2.5A 110mOhm | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 110 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 600V 25mA D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
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VIEW | IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 110mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 110 mOhms | Enhancement |
