- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,442
In-stock
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onsemi | MOSFET NFET SO8FL 100V 132A 4.8M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 132 A | 3.8 mOhms | 2 V | 58 nC | Enhancement | |||||
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1,320
In-stock
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onsemi | MOSFET NFET SO8FL 60V 92A 4.7MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 93 A | 3.8 mOhms | 1.2 V | 33.7 nC | Enhancement | |||||
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702
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.8 mOhms | Enhancement | OptiMOS | ||||||
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1,015
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.8 mOhms | Enhancement | OptiMOS | ||||||
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4,090
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 3.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | |||||
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431
In-stock
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Texas instruments | MOSFET 80V, N-Channel NexFET Power Mosfet | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 3.8 mOhms | 2.2 V | 76 nC | Enhancement | NexFET | ||||
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70
In-stock
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Toshiba | MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK | 20 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 136 A | 3.8 mOhms | 4 V | 81 nC | Enhancement | |||||
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4,986
In-stock
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Infineon Technologies | MOSFET N-Ch 34V 98A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 34 V | 98 A | 3.8 mOhms | Enhancement | |||||||
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1,490
In-stock
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onsemi | MOSFET NFET U8FL 25V 66A 4.8MOHM | 20 V | SMD/SMT | WDFN-8 | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 66 A | 3.8 mOhms | 1.1 V | 12.4 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO 75V 1 N-CH HEXFET 3.8mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 44 A | 3.8 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 4.9mOhms | 20 V | SMD/SMT | DirectFET-M2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 72 A | 3.8 mOhms | Enhancement | |||||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 47 A | 3.8 mOhms | 1.3 V to 2.3 V | 21 nC | Enhancement | |||||
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3,775
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 19A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 3.8 mOhms | Enhancement | |||||||
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1
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | GaN | N-Channel | 40 V | 90 A | 3.8 mOhms | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 3.8mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 44 A | 3.8 mOhms | Enhancement |