- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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11,747
In-stock
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Fairchild Semiconductor | MOSFET 40V PCH POWER TRENCH MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 8.2 A | 22 mOhms | Enhancement | PowerTrench | ||||||
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4,642
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 35 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 35 A | 22 mOhms | Enhancement | |||||||
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3,361
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 80V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 7.6 A | 22 mOhms | Enhancement | PowerTrench | ||||||
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2,569
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 22 mOhms | Enhancement | PowerTrench | ||||||
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3,740
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -11A 13.5mOhm 75nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11 A | 22 mOhms | 75 nC | |||||||||
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657
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 76A 23.2mOhm 100nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 72 A | 22 mOhms | 100 nC | Enhancement | ||||||
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4,228
In-stock
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IR / Infineon | MOSFET MOSFT 100V 7.3A 22mOhm 34nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 7.3 A | 22 mOhms | 34 nC | |||||||||
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26,190
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 30A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 30 A | 22 mOhms | Enhancement | OptiMOS | ||||||
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769
In-stock
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Fairchild Semiconductor | MOSFET Dual NCh PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.9 A | 22 mOhms | Enhancement | PowerTrench SyncFET | ||||||
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5,423
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | |||||
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22
In-stock
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onsemi | MOSFET CHPFT SNGL 30V 8.2A NFET | 20 V | SMD/SMT | ChipFET-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 18 nC | Enhancement | ||||||
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2,175
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | |||||
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713
In-stock
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Texas instruments | MOSFET 30V N-Channel FemtoFETGäó MOSFET 3-PI... | 20 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5.9 A | 22 mOhms | 900 mV | 5.1 nC | Enhancement | |||||
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2,938
In-stock
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IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC | ||||||
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VIEW | Diodes Incorporated | MOSFET NMOS-DUAL | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.9 A | 22 mOhms | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 3.1 A | 22 mOhms | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 75V 1 N-CH HEXFET 22mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 45 A | 22 mOhms | 4 V | 34 nC |