- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
18 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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17,612
In-stock
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Fairchild Semiconductor | MOSFET SINGLE NCH LOG LVEL PWR TRENCH MOSFET | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.3 A | 25 mOhms | Enhancement | PowerTrench | |||||
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2,400
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -40V -10.5A 15mOhm 73nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 10.5 A | 25 mOhms | 73 nC | ||||||||
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13,871
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.1 A | 25 mOhms | 1.2 V | 4.4 nC | Enhancement | ||||
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5,055
In-stock
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onsemi | MOSFET Single N-Channel 60V,20A,24mohm | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 25 mOhms | 2.5 V | 16 nC | |||||
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2,615
In-stock
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onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 40 A | 25 mOhms | ||||||||
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1,013
In-stock
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Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | UltraFET | |||||
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2,199
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 100 V | 27 A | 25 mOhms | 3 V | 18 nC | Enhancement | |||||
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4,056
In-stock
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onsemi | MOSFET NFETDPAK40V100A3.7M OHM | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7.4 A | 25 mOhms | |||||||
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1,121
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 7.1 A | 25 mOhms | - 2.1 V | 47 nC | Enhancement | ||||
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4,042
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | ||||
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1,579
In-stock
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IR / Infineon | MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | ||||||||
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2,900
In-stock
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Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.9 A | 25 mOhms | 2.1 V | 13 nC | Enhancement | ||||
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9,955
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 50mOhm 10V 3.6A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.6 A | 25 mOhms | 1 V | 11.2 nC | Enhancement | ||||
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985
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss 51A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.2 A | 25 mOhms | 800 mV | 18.4 nC | Enhancement | ||||
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18,843
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | 20 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 25 mOhms | 1.35 V to 2.35 V | 4.2 nC | Enhancement | ||||
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2,750
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | ATPAK-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 30 A | 25 mOhms | |||||||
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VIEW | Fairchild Semiconductor | MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 56 A | 25 mOhms | Enhancement | ||||||
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4,576
In-stock
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Toshiba | MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 25 mOhms | 2 V to 4 V | 11 nC | Enhancement |
