- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,367
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | N-Channel | 120 V | 75 A | 9.2 mOhms | 3 V | 49 nC | Enhancement | ||||||
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5
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 9.2 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
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1,100
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 9.2 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement | |||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 87 A | 9.2 mOhms | 48 nC | Enhancement |