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Package / Case :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPD110N12N3GATMA1
1+
$1.710
10+
$1.450
100+
$1.160
500+
$1.020
2500+
$0.782
RFQ
3,367
In-stock
Infineon Technologies MOSFET MV POWER MOS 20 V SMD/SMT TO-252-3 - 55 C + 175 C Reel   Si N-Channel 120 V 75 A 9.2 mOhms 3 V 49 nC Enhancement  
BSO110N03MS G
1+
$0.650
10+
$0.537
100+
$0.347
1000+
$0.278
2500+
$0.234
RFQ
5
In-stock
Infineon Technologies MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 12.1 A 9.2 mOhms 1 V 20 nC Enhancement OptiMOS
BSO110N03MSGXUMA1
1+
$0.650
10+
$0.537
100+
$0.347
1000+
$0.278
2500+
$0.234
RFQ
1,100
In-stock
Infineon Technologies MOSFET N-Ch 30V 12.1A DSO-8 OptiMOS 3M 20 V SMD/SMT SO-8 - 55 C + 150 C Reel 1 Channel Si N-Channel 30 V 12.1 A 9.2 mOhms 1 V 20 nC Enhancement OptiMOS
AUIRFR3504TRL
3000+
$0.822
6000+
$0.792
9000+
$0.732
VIEW
RFQ
Infineon Technologies MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms 20 V SMD/SMT TO-252-3 - 55 C   Reel 1 Channel Si N-Channel 40 V 87 A 9.2 mOhms   48 nC Enhancement  
AUIRFR3504TR
VIEW
RFQ
IR / Infineon MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms 20 V SMD/SMT TO-252-3 - 55 C   Reel 1 Channel Si N-Channel 40 V 87 A 9.2 mOhms   48 nC Enhancement  
AUIRFR3504TRR
VIEW
RFQ
IR / Infineon MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms 20 V SMD/SMT TO-252-3 - 55 C   Reel 1 Channel Si N-Channel 40 V 87 A 9.2 mOhms   48 nC Enhancement  
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