- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
27 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,848
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.5 mOhms | 2 V | 16 nC | PowerTrench | |||||
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5,606
In-stock
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Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 8.5 mOhms | Enhancement | PowerTrench | ||||||
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3,588
In-stock
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Fairchild Semiconductor | MOSFET PT7 N-ch 80/20V Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 48 A | 8.5 mOhms | 2 V | 31 nC | PowerTrench Power Clip | |||||
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3,823
In-stock
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IR / Infineon | MOSFET MOSFT 60V 84A 8.5mOhm 58nC | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 75 A | 8.5 mOhms | 58 nC | Enhancement | ||||||
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45,200
In-stock
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STMicroelectronics | MOSFET N Ch 55V 6.5mohm 80A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | Enhancement | |||||||
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3,150
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 60 A | 8.5 mOhms | 11 nC | |||||||||
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2,903
In-stock
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STMicroelectronics | MOSFET STripFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8.5 mOhms | 4 V | 33.5 nC | Enhancement | |||||
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4,930
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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3,560
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 14 A | 8.5 mOhms | 4 V | 51 nC | Enhancement | |||||
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22,500
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13.5 A | 8.5 mOhms | Enhancement | PowerTrench | ||||||
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2,283
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 40 A | 8.5 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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3,349
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 81A 5.7mOhm 10nC Log Lvl | 20 V | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 25 V | 81 A | 8.5 mOhms | 10 nC | ||||||||||
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3,980
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.5mOhms 9.3nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 34 A | 8.5 mOhms | 9.3 nC | StrongIRFET | ||||||||
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800
In-stock
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Infineon Technologies | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 8.5 mOhms | Enhancement | |||||||
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1,290
In-stock
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Fairchild Semiconductor | MOSFET 30V N-CHANNEL | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 8.5 mOhms | Enhancement | PowerTrench | ||||||
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403
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 8.5 mOhms | Enhancement | PowerTrench | ||||||
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1,563
In-stock
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onsemi | MOSFET NFET SO8FL 30V 48A 6MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 8.5 mOhms | ||||||||
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2,157
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 30Vgss 6807pF 139nC | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13.2 A | 8.5 mOhms | - 1.6 V | 139 nC | Enhancement | PowerDI | ||||
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1,944
In-stock
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Diodes Incorporated | MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 20V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 8 A | 8.5 mOhms | 30.6 nC | |||||||
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2,925
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CHAN | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 8.5 mOhms | 1 V | 30.6 nC | DIOFET | |||||
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GET PRICE |
45,980
In-stock
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Texas instruments | MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.9 V | 29 nC | NexFET | ||||
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400
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 8.5 mOhms | 1.5 V | 29 nC | Enhancement | NexFET | ||||
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2,875
In-stock
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Fairchild Semiconductor | MOSFET 30V PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 12 A | 8.5 mOhms | Enhancement | PowerTrench SyncFET | ||||||
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2,000
In-stock
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Infineon Technologies | MOSFET 60V StrongIRFET Power Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 8.5 mOhms | 3.7 V | 58 nC | StrongIRFET | |||||
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VIEW | Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 6.5mOhms 29nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET MOSFT 20V 110A 6.5mOhm 29nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 20 V | 110 A | 8.5 mOhms | 29 nC | |||||||||
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VIEW | IR / Infineon | MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 44 A | 8.5 mOhms | Enhancement |